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2SD104
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2SD104

SKU: 2SD104
2SD104 Transistor Germanium NPN CASE: TO1 MAKE: Toshiba
Product specifications
Type Transistor Germanium NPN
Case TO1
Manufacturer Toshiba
Vbr CBO 20
Max. PD (W) 150m
Derate (Amb) (W/°C) 3.0m
hfe 60
Ic Max. (A) 400m
Polarity NPN
Trans. Freq (Hz) Min. 2.8M
@VCE (test) (V) .50
Oper. Temp (°C) Max. 75
@Ic (A) 100m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 125 °C
Forward Current Transfer Ratio (hFE), MIN 60
SKU 584725
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