2SD105

SKU: 2SD105

2SD105 Transistor Germanium NPN CASE: TO1 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	TO1
Manufacturer	Toshiba
Vbr CBO	20
Max. PD (W)	150m
Derate (Amb) (W/°C)	3.0m
hfe	35
Ic Max. (A)	400m
Polarity	NPN
Trans. Freq (Hz) Min.	2.8M
@VCE (test) (V)	.50
Oper. Temp (°C) Max.	75
@Ic (A)	100m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	125 °C
Forward Current Transfer Ratio (hFE), MIN	35
SKU	584726

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