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2SD107
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2SD107

SKU: 2SD107
2SD107 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 50
Max. hFE 10k
Min hFE 1.0k
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 20u
Polarity NPN
Derate Above 25°C 2.5
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 4000
SKU 584727
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