| 2SD1076 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO218 | |
| Manufacturer | Hitachi | |
| Vbr CBO | 25 | |
| Vbr CEO | 25 | |
| Max. PD (W) | 20 | |
| Min hFE | 20 | |
| Ic Max. (A) | 2.5 | |
| @Ic (test) (A) | 1.5 | |
| Icbo Max. @Vcb Max. (A) | 20u | |
| Polarity | NPN | |
| Derate Above 25°C | 160m | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 2 | |
| Pinout Equivalence Number | 3-15 | |
| Surface Mounted Yes/No | YES | |
| Maximum Collector Power Dissipation (Pc) | 20 W | |
| Maximum Collector-Base Voltage |Vcb| | 26 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 2.5 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 180 | |
| SKU | 345321 | |