| Type | Transistor Silicon NPN | |
| Case | TO218 | |
| Manufacturer | Hitachi | |
| Vbr CBO | 80 | |
| Vbr CEO | 80 | |
| Max. PD (W) | 20 | |
| Max. hFE | 200 | |
| Min hFE | 60 | |
| Ic Max. (A) | 2.0 | |
| @Ic (test) (A) | 50m | |
| Polarity | NPN | |
| Oper. Temp (°C) Max. | 140 | |
| @VCE (V) | 4.0 | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 20 W | |
| Maximum Collector-Base Voltage |Vcb| | 50 V | |
| Maximum Emitter-Base Voltage |Veb| | 4 V | |
| Maximum Collector Current |Ic max| | 2 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 100 | |
| SKU | 762170 | |