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2SD1080
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2SD1080

SKU: 2SD1080
2SD1080 Transistor Silicon NPN CASE: TO218 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Hitachi
Vbr CBO 180
Vbr CEO 120
Max. PD (W) 20
Max. hFE 200
Min hFE 60
Ic Max. (A) 1.5
@Ic (test) (A) 150m
Polarity NPN
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 762164
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