The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD1083

2SD1083

SKU: 2SD1083
2SD1083 Transistor Silicon NPN CASE: TO218 MAKE: Hitachi
Datasheet
2SD1083 Datasheet
Product specifications
Equivalent 2SD1083L
Type Transistor Silicon NPN
Case TO218
Manufacturer Hitachi
Vbr CBO 150
Vbr CEO 60
Max. PD (W) 20
Min hFE 150
Ic Max. (A) 2.0
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Derate Above 25°C 160m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 345325
Back