2SD1087

SKU: 2SD1087

2SD1087 Transistor Silicon NPN CASE: MT200 MAKE: Toshiba

Datasheet

2SD1087 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	MT200
Manufacturer	Toshiba
Vbr CEO	100
Max. PD (W)	100
Min hFE	1.0k
Ic Max. (A)	15
@Ic (test) (A)	15
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	NPN
Trans. Freq (Hz) Min.	14M
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	280 pF
Transition Frequency (ft):	15 MHz
Forward Current Transfer Ratio (hFE), MIN	3000
SKU	345327

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