The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD1093
View detailed images (13)

2SD1093

SKU: 2SD1093
2SD1093 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi
Datasheet
2SD1093 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Hitachi
Vbr CEO 400
Max. PD (W) 50
Min hFE 10
Ic Max. (A) 7.0
@Ic (test) (A) 2.5
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
Tr Max. (s) 1u
Derate Above 25°C 400m
Oper. Temp (°C) Max. 140
@VCE (V) 5
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 1000 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 30
SKU 345329
Back