2SD1101

SKU: 2SD1101

2SD1101 Transistor Silicon NPN CASE: TO236 MAKE: Hitachi

Datasheet

2SD1101 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO236
Manufacturer	Hitachi
Vbr CEO	20
Max. PD (W)	150m
hfe	85
Ic Max. (A)	700m
Polarity	NPN
Trans. Freq (Hz) Min.	280M
@VCE (test) (V)	1.0
@Ic (A)	150m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	0.7 A
Max. Operating Junction Temperature (Tj)	125 °C
Forward Current Transfer Ratio (hFE), MIN	140
SKU	345330

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