2SD1105

SKU: 2SD1105

2SD1105 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics

Datasheet

2SD1105 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CBO	120
Vbr CEO	80
Max. PD (W)	200
Max. hFE	120
Min hFE	40
Ic Max. (A)	15
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	30u
Polarity	NPN
Derate Above 25°C	1.6
Trans. Freq (Hz) Min.	1.0M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	200 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	80
SKU	550643

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