| 2SD1118 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO220 | |
| Manufacturer | Fuji Electric | |
| Vbr CBO | 80 | |
| Vbr CEO | 40 | |
| Max. PD (W) | 60 | |
| t(f) Max. (S) | 500n- | |
| Min hFE | 300 | |
| Ic Max. (A) | 10 | |
| @Ic (test) (A) | 1.0 | |
| Icbo Max. @Vcb Max. (A) | 100u | |
| Polarity | NPN | |
| Oper. Temp (°C) Max. | 150 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 50 W | |
| Maximum Collector-Base Voltage |Vcb| | 80 V | |
| Maximum Emitter-Base Voltage |Veb| | 15 V | |
| Maximum Collector Current |Ic max| | 10 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 400 | |
| SKU | 345337 | |