2SD1119

SKU: 2SD1119

2SD1119 Transistor Silicon NPN CASE: SOT89 MAKE: Matsushita Electronics

Datasheet

2SD1119 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT89
Manufacturer	Matsushita Electronics
Vbr CBO	40
Vbr CEO	25
Max. PD (W)	1.0
Max. hFE	600
Min hFE	180
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Derate Above 25°C	8.0m
Trans. Freq (Hz) Min.	150M
Oper. Temp (°C) Max.	150
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	260
SMD Transistor Code	TQ_TR
SKU	345338

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