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2SD1126K
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2SD1126K

SKU: 2SD1126K
2SD1126K Transistor Silicon NPN CASE: TO220 MAKE: Hitachi
Datasheet
2SD1126K Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Hitachi
Vbr CEO 120
Max. PD (W) 50
t(f) Max. (S) 8u-
Max. hFE 20k
Min hFE 1.0k
Ic Max. (A) 10
@Ic (test) (A) 5.0
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 800n-
Derate Above 25°C 400m
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 1500
SKU 345339
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