2SD1132

SKU: 2SD1132

2SD1132 Transistor Silicon NPN CASE: TO220 MAKE: Hitachi

Datasheet

2SD1132 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Hitachi
Vbr CEO	60
Max. PD (W)	40
Max. hFE	320
Min hFE	60
Ic Max. (A)	4.0
@Ic (test) (A)	1.0
Polarity	NPN
Trans. Freq (Hz) Min.	8.0M
@VCE (V)	4.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	100
SKU	115396

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