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2SD1137
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2SD1137

SKU: 2SD1137
2SD1137 Transistor Silicon NPN CASE: TO220 MAKE: Hitachi
Datasheet
2SD1137 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Hitachi
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 40
Max. hFE 250
Min hFE 50
Ic Max. (A) 4.0
@Ic (test) (A) 0.5
Polarity NPN
Derate Above 25°C 320m
Oper. Temp (°C) Max. 140
@VCE (V) 4
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 120
SKU 115399
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