| 2SD1149 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | SOT23 | |
| Manufacturer | Matsushita Electronics | |
| Vbr CBO | 100 | |
| Vbr CEO | 100 | |
| Max. PD (W) | 200m | |
| Derate (Amb) (W/°C) | 2.0m | |
| hfe | 1.0k | |
| Ic Max. (A) | 20m | |
| Icbo Max. @Vcb Max. (A) | 100n | |
| Polarity | NPN | |
| @VCE (test) (V) | 10 | |
| Oper. Temp (°C) Max. | 150 | |
| @Ic (A) | 2.0m | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | YES | |
| Maximum Collector Power Dissipation (Pc) | 0.2 W | |
| Maximum Collector-Base Voltage |Vcb| | 100 V | |
| Maximum Emitter-Base Voltage |Veb| | 15 V | |
| Maximum Collector Current |Ic max| | 0.02 A | |
| Max. Operating Junction Temperature (Tj) | 125 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 1000 | |
| SKU | 345343 | |