2SD1151

SKU: 2SD1151

2SD1151 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CEO	1.5k
Max. PD (W)	95
Max. hFE	150
Min hFE	40
Ic Max. (A)	5.0
@Ic (test) (A)	3.5
Icbo Max. @Vcb Max. (A)	100u
Mat.	Silicon Logic
Polarity	NPN
Derate Above 25°C	780m
@VCE (test)	10
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	95 W
Maximum Collector-Base Voltage \|Vcb\|	1500 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	40
SKU	550647

Back