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2SD1154
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2SD1154

SKU: 2SD1154
2SD1154 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 350
Vbr CEO 200
Max. PD (W) 50
Max. hFE 36
Min hFE 11
Ic Max. (A) 7.0
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 750n
Derate Above 25°C 400m
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 350 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 120
SKU 550648
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