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2SD1160O
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2SD1160O

SKU: 2SD1160O
2SD1160O Transistor Silicon NPN CASE: SOT533 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case SOT533
Manufacturer Toshiba
Vbr CBO 50
Vbr CEO 50
Max. PD (W) 1.0
Max. hFE 200
Min hFE 100
Ic Max. (A) 2.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Derate Above 25°C 8.0m
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 586144
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