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2SD1160Y
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2SD1160Y

SKU: 2SD1160Y
2SD1160Y Transistor Silicon NPN CASE: SOT533 MAKE: Toshiba
Price:
£4.79 Inc. VAT (£3.99 Ex. VAT)
£4.79 Inc. VAT (£3.99 Ex. VAT)
Qty
  • 2 pieces in 1-2 Days
  • More pieces shipped in 14 days
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Product specifications
Type Transistor Silicon NPN
Case SOT533
Manufacturer Toshiba
Vbr CBO 50
Vbr CEO 50
Max. PD (W) 1.0
Max. hFE 300
Min hFE 150
Ic Max. (A) 2.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Derate Above 25°C 8.0m
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 150
SKU 586145
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