2SD1165

SKU: 2SD1165

2SD1165 Transistor Silicon NPN CASE: Standard MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	Standard
Manufacturer	Toshiba
Vbr CEO	900
Max. PD (W)	1.2k
t(f) Max. (S)	5.0u
Min hFE	60
Ic Max. (A)	100
@Ic (test) (A)	100
Icbo Max. @Vcb Max. (A)	2.0m
Mat.	Silicon Logic
Polarity	NPN
Tr Max. (s)	2.0u
R(sat) (Û)	25m
t(stor) Max. (S)	25u
Derate Above 25°C	12
Trans. Freq (Hz) Min.	100k
@VCE (test)	5.0
Oper. Temp (°C) Max.	125
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1250 W
Maximum Collector-Base Voltage \|Vcb\|	1000 V
Maximum Collector-Emitter Voltage \|Vce\|	900 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	100 A
Max. Operating Junction Temperature (Tj)	125 °C
Forward Current Transfer Ratio (hFE), MIN	80
SKU	762063

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