The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD1165A
View detailed images (1)

2SD1165A

SKU: 2SD1165A
2SD1165A Transistor Silicon NPN CASE: Standard MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case Standard
Manufacturer Toshiba
Vbr CEO 900
Max. PD (W) 1.2k
Min hFE 60
Ic Max. (A) 100
@Ic (test) (A) 100
Icbo Max. @Vcb Max. (A) 2.0n
Mat. Silicon Logic
Polarity NPN
R(sat) (Û) 20m
Derate Above 25°C 80m
Trans. Freq (Hz) Min. 100k
@VCE (test) 5.0
Oper. Temp (°C) Max. 125
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1250 W
Maximum Collector-Base Voltage |Vcb| 1000 V
Maximum Collector-Emitter Voltage |Vce| 900 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 100 A
Max. Operating Junction Temperature (Tj) 125 °C
Forward Current Transfer Ratio (hFE), MIN 60
SKU 762062
Back