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2SD1168
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2SD1168

SKU: 2SD1168
2SD1168 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Datasheet
2SD1168 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 1.5k
Vbr CEO 800
Max. PD (W) 50
Max. hFE 25
Min hFE 9.0
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Tr Max. (s) 2.0u
Derate Above 25°C 400m
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 80
SKU 115400
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