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2SD1172
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2SD1172

SKU: 2SD1172
2SD1172 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 1.5k
Vbr CEO 1.5k
Max. PD (W) 65
Max. hFE 18
Min hFE 5.0
Ic Max. (A) 3.0
@Ic (test) (A) 2.5
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Tr Max. (s) 10u
Derate Above 25°C 619m
Oper. Temp (°C) Max. 135
@VCE (V) 10
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 65 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 80
SKU 550649
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