| 2SD1175 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO3 | |
| Manufacturer | Matsushita Electronics | |
| Vbr CBO | 1.5k | |
| Vbr CEO | 1.5k | |
| Max. PD (W) | 100 | |
| Max. hFE | 20 | |
| Min hFE | 6.0 | |
| Ic Max. (A) | 5.0 | |
| @Ic (test) (A) | 5.0 | |
| Icbo Max. @Vcb Max. (A) | 1.0m | |
| Polarity | NPN | |
| Tr Max. (s) | 12u | |
| Derate Above 25°C | 952m | |
| @VCE (V) | 10 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 100 W | |
| Maximum Collector-Base Voltage |Vcb| | 1500 V | |
| Maximum Collector Current |Ic max| | 5 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 80 | |
| SKU | 368887 | |