2SD1177B

SKU: 2SD1177B

2SD1177B Transistor Silicon NPN CASE: SOT32 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT32
Manufacturer	Hitachi
Vbr CBO	100
Vbr CEO	60
Max. PD (W)	20
Max. hFE	120
Min hFE	60
Ic Max. (A)	2.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Derate Above 25°C	.16
Trans. Freq (Hz) Min.	230M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	50 pF
Transition Frequency (ft):	230 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	543474

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