2SD1185

SKU: 2SD1185

2SD1185 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi

Datasheet

2SD1185 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Hitachi
Vbr CBO	1.2k
Vbr CEO	800
Max. PD (W)	50
t(f) Max. (S)	1.0u
Max. hFE	30
Min hFE	10
Ic Max. (A)	5.0
@Ic (test) (A)	300m
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
Derate Above 25°C	.40
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	1200 V
Maximum Collector-Emitter Voltage \|Vce\|	800 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	60
SKU	20585

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