2SD1199

2SD1199

SKU: 2SD1199
2SD1199 Transistor Silicon NPN CASE: TO92 MAKE: Matsushita Electronics
Datasheet
2SD1199 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer Matsushita Electronics
Vbr CBO 50
Vbr CEO 40
Max. PD (W) 400m
Derate (Amb) (W/°C) 3.2m
hfe 2.0k=
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 80
SKU 345354
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