2SD12

SKU: 2SD12

2SD12 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CBO	75
Vbr CEO	40
Max. PD (W)	60
Max. hFE	75
Min hFE	25
Ic Max. (A)	2.5
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	10m
Polarity	NPN
R(sat) (Û)	800m
Derate Above 25°C	500m
Trans. Freq (Hz) Min.	20M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	75 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	2.5 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	549505

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