The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD120
View detailed images (12)

2SD120

SKU: 2SD120
2SD120 Transistor Silicon NPN CASE: TO5 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Hitachi
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 1.0
Max. hFE 100
Min hFE 15
Ic Max. (A) 1.5
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
R(sat) (Û) 5.0
Derate Above 25°C 6.6m
Trans. Freq (Hz) Min. 24k
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 4 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 15
SKU 762041
Back