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2SD1200
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2SD1200

SKU: 2SD1200
2SD1200 Transistor Silicon NPN CASE: TO126 MAKE: Rohm Semiconductor
Datasheet
2SD1200 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Rohm Semiconductor
Vbr CEO 80
Max. PD (W) 5.0
Max. hFE 390
Min hFE 82
Ic Max. (A) 700m
Polarity NPN
Trans. Freq (Hz) Min. 120M
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector Current |Ic max| 0.7 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 345355
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