2SD1201

SKU: 2SD1201

2SD1201 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Hitachi
Vbr CBO	500
Vbr CEO	400
Max. PD (W)	100
t(f) Max. (S)	3u-
Min hFE	200
Ic Max. (A)	10
@Ic (test) (A)	5
Icbo Max. @Vcb Max. (A)	50u
Polarity	NPN
Tr Max. (s)	2u-
Derate Above 25°C	800m
Oper. Temp (°C) Max.	140
@VCE (V)	3
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	500 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	200
SKU	543109

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