2SD1208

SKU: 2SD1208

2SD1208 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CEO	65
Max. PD (W)	100
Max. hFE	20k
Min hFE	2.0k
Ic Max. (A)	5.0
@Ic (test) (A)	500m
Mat.	Silicon Logic
Polarity	NPN
Derate Above 25°C	860m
@VCE (test)	5.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	10000
SKU	585413

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