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2SD1220
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2SD1220

SKU: 2SD1220
2SD1220 Transistor Silicon NPN CASE: SOT533 MAKE: Toshiba
Datasheet
2SD1220 Datasheet
Product specifications
Equivalent 2SD1220Y
Type Transistor Silicon NPN
Case SOT533
Manufacturer Toshiba
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 1.0
Max. hFE 320
Min hFE 160
Ic Max. (A) 1.5
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Derate Above 25°C 8.0m
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 345364
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