2SD1221

SKU: 2SD1221

2SD1221 Transistor Silicon NPN CASE: TO251 MAKE: Toshiba

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

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Datasheet

2SD1221 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO251
Manufacturer	Toshiba
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	1.0
t(f) Max. (S)	800n-
Max. hFE	300
Min hFE	60
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Trans. Freq (Hz) Min.	3.0M-
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	70 pF
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	345365

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