2SD1221Y

SKU: 2SD1221Y

2SD1221Y Transistor Silicon NPN CASE: SOT533 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT533
Manufacturer	Toshiba
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	1.0
t(f) Max. (S)	.80u
Max. hFE	200
Min hFE	100
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	8.0m
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	70 pF
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	586151

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