2SD1224

SKU: 2SD1224

2SD1224 Transistor Silicon NPN CASE: SOT533 MAKE: Toshiba

Datasheet

2SD1224 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT533
Manufacturer	Toshiba
Vbr CBO	30
Vbr CEO	30
Max. PD (W)	1.0
t(f) Max. (S)	.30u
Min hFE	4.0k
Ic Max. (A)	1.5
@Ic (test) (A)	150m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Derate Above 25°C	8.0m
Oper. Temp (°C) Max.	140
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	6000
SKU	345367

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