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2SD123
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2SD123

SKU: 2SD123
2SD123 Transistor Silicon NPN CASE: TO8 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO8
Manufacturer Hitachi
Vbr CBO 100
Vbr CEO 55
Max. PD (W) 7.0
Max. hFE 100
Min hFE 15
Ic Max. (A) 3.0
@Ic (test) (A) .75
Icbo Max. @Vcb Max. (A) .01m
Polarity NPN
Tr Max. (s) 2.6u
Derate Above 25°C 48m
Trans. Freq (Hz) Min. 600k
@VCE (V) 4.0i
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 55 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 762013
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