2SD1234

SKU: 2SD1234

2SD1234 Transistor - Case: TO3 Make: Sanyo Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Sanyo Semiconductor
Vbr CEO	100
Max. PD (W)	80
Max. hFE	4k-
Min hFE	1.5k
Ic Max. (A)	10
@Ic (test) (A)	5
Icbo Max. @Vcb Max. (A)	0.1m
Mat.	Silicon Logic
Polarity	NPN
Trans. Freq (Hz) Min.	20M
@VCE (test)	3
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	110 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	20 MHz
Forward Current Transfer Ratio (hFE), MIN	6000
SKU	571761

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