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2SD1252A
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2SD1252A

SKU: 2SD1252A
2SD1252A Transistor Silicon NPN CASE: TO262 MAKE: Matsushita Electronics
Datasheet
2SD1252A Datasheet
Product specifications
Equivalent 2SD1252
Type Transistor Silicon NPN
Case TO262
Manufacturer Matsushita Electronics
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 35
Max. hFE 250
Min hFE 40
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 200u
Polarity NPN
Tr Max. (s) 2.5u
Derate Above 25°C 280m
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 35 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 80
SKU 345386
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