The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD1253A
View detailed images (12)

2SD1253A

SKU: 2SD1253A
2SD1253A Transistor Silicon NPN CASE: TO262 MAKE: Matsushita Electronics
Datasheet
2SD1253A Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO262
Manufacturer Matsushita Electronics
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 40
Max. hFE 250
Min hFE 40
Ic Max. (A) 4.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 400u
Polarity NPN
Tr Max. (s) 1.2u
Derate Above 25°C 320m
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 80
SKU 345388
Back