The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD1256
View detailed images (12)

2SD1256

SKU: 2SD1256
2SD1256 Transistor Silicon NPN CASE: TO251 MAKE: Matsushita Electronics
Datasheet
2SD1256 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO251
Manufacturer Matsushita Electronics
Vbr CBO 130
Vbr CEO 80
Max. PD (W) 40
Max. hFE 260
Min hFE 60
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Tr Max. (s) 1.5u
Derate Above 25°C 320m
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 130 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 345389
Back