2SD1259

SKU: 2SD1259

2SD1259 Transistor Silicon NPN CASE: TO262 MAKE: Matsushita Electronics

Datasheet

2SD1259 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SD1259A
Type	Transistor Silicon NPN
Case	TO262
Manufacturer	Matsushita Electronics
Vbr CBO	80
Vbr CEO	60
Max. PD (W)	40
Max. hFE	1.5k
Min hFE	500
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	320m
Trans. Freq (Hz) Min.	50M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	500
SKU	345393

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