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2SD1260A
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2SD1260A

SKU: 2SD1260A
2SD1260A Transistor Silicon NPN CASE: TO262 MAKE: Matsushita Electronics
Datasheet
2SD1260A Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO262
Manufacturer Matsushita Electronics
Vbr CEO 80
Max. PD (W) 35
Max. hFE 10k
Min hFE 1.0k
Ic Max. (A) 2.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 1.0m
Mat. Silicon Logic
Polarity NPN
Derate Above 25°C 280m
@VCE (test) 4.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 35 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 1500
SKU 345395
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