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2SD1262
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2SD1262

SKU: 2SD1262
2SD1262 Transistor Silicon NPN CASE: TO251 MAKE: Matsushita Electronics
Datasheet
2SD1262 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO251
Manufacturer Matsushita Electronics
Vbr CEO 60
Max. PD (W) 45
Max. hFE 10k
Min hFE 1.0k
Ic Max. (A) 8.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity NPN
Derate Above 25°C 360m
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 45 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 1500
SKU 345398
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