2SD1266A

SKU: 2SD1266A

2SD1266A Transistor Silicon NPN CASE: TO220 MAKE: Matsushita Electronics

Datasheet

2SD1266A Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Matsushita Electronics
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	35
Max. hFE	250
Min hFE	40
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	200u
Polarity	NPN
Tr Max. (s)	2.5u
Derate Above 25°C	280m
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	35 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	40
SKU	20443

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