The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD126H
View detailed images (13)

2SD126H

SKU: 2SD126H
2SD126H Transistor Silicon NPN CASE: TO3 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Hitachi
Vbr CBO 150
Vbr CEO 100
Max. PD (W) 60
t(f) Max. (S) 6.0u-
Max. hFE 40-
Min hFE 20
Ic Max. (A) 7.0
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 25u
Polarity NPN
Tr Max. (s) 1.6u-
R(sat) (Û) 1.0
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 543117
Back