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2SD1270
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2SD1270

SKU: 2SD1270
2SD1270 Transistor Silicon NPN CASE: TO220 MAKE: Matsushita Electronics
Datasheet
2SD1270 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Matsushita Electronics
Vbr CBO 130
Vbr CEO 80
Max. PD (W) 40
Max. hFE 260
Min hFE 60
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Tr Max. (s) 1.5u
Derate Above 25°C 320m
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 130 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 116119
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