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2SD1273A
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2SD1273A

SKU: 2SD1273A
2SD1273A Transistor Silicon NPN CASE: TO220F MAKE: Matsushita Electronics
Datasheet
2SD1273A Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220F
Manufacturer Matsushita Electronics
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 40
Max. hFE 1.5k
Min hFE 500
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 320m
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 345405
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